¡i°ê»Ú§Þ³N¥æ¬y½×¾ÂII¡j
Foresight and Challenges of Oxide Semiconductor Devices in AI Applications
½×¾Â®É¶¡¡G
114/10/29(¤T)¡A13:30~16:30¡A¤T¤p®É
 
½×¾Â¦aÂI¡G
°ê¥ß²MµØ¤j¾Ç¥x¿nÀ]1¼Ó®]¹BÂ{ºtÁ¿ÆU
½×¡@¡@¾Â¡@¡@ij¡@¡@µ{
®É ¶¡ ij ÃD ¥D «ù ¤H / ºt Á¿ ¹Å »«
13:00-13:30 ¨Ó »« ³ø ¨ì
13:30-13:40 ¥D«ù¤H¶}³õ¤Î¤¶²Ð¶Q»« ±i¹ù¶Q³N ±Ð±Â
(°ê¥ß²MµØ¤j¾Ç­ì¤l¬ì¾Ç°|¤uµ{»P¨t²Î¬ì¾Ç¨t)
13:40-14:20 3Dx3D Semiconductor*AI Co-Innovation ®]¤¸¦¨ ®Õ¸u°Æ®Õªøº[°|ªø
(°ê¥ß¶§©ú¥æ³q¤j¾Ç/
°ê¥ß¶§©ú¥æ³q¤j¾Ç²£¾Ç³Ð·s¬ã¨s¾Ç°|)
14:20-15:00 Atomic-layer-deposited atomically thin In2O3 channel for BEOL logic/RF and memory applications Prof. Peide Ye
(Chair Professor, Purdue Univ.)
15:00-15:20 ¤¤ ³õ ¥ð ®§
15:20-16:00 Semiconductor displays for AI applications §d¥õ®¦ °ÆÁ`¸g²z
(¤Í¹F¥ú¹qªÑ¥÷¦³­­¤½¥qÅã¥Ü²£«~¬ãµoÁ`³¡)
16:00-16:30 ºî ¦X ®y ½Í

¥D«ù¤H¤ÎºtÁ¿¹Å»«Â²¤¶¡G
¥D«ù¤H¡G±i¹ù¶Q³N ±Ð±Â
(°ê¥ß²MµØ¤j¾Ç­ì¤l¬ì¾Ç°|¤uµ{»P¨t²Î¬ì¾Ç¨t/°ê¥ß²MµØ¤j¾Ç¥b¾ÉÅé¬ã¨s¾Ç°|/
°ê¥ß²MµØ¤j¾Ç­ì¤l¬ì¾Ç°|®Ö¤l¤uµ{»P¬ì¾Ç¬ã¨s©Ò)

¾Ç¾ú¡G°ê¥ß»OÆW¤j¾Ç¹q¾÷¤uµ{¾Ç¨t ³Õ¤h
¸g¾ú¡G°ê¥ß²MµØ¤j¾Ç¤uµ{»P¨t²Î¬ì¾Ç¨t ¨t¥D¥ô
¡@¡@¡@°ê¥ß²MµØ¤j¾Ç¯à·½»PÀô¹Ò¤¤¤ß °Æ¥D¥ô
¡@¡@¡@°ê¥ß²MµØ¤j¾Ç¤uµ{»P¨t²Î¬ì¾Ç¨t °Æ¨t¥D¥ô
±Mªø¡GFields of Interest¡BHigh-k gate dielectric for VLSI device¡BNonvolatile memory device (Flash)¡B
¡@¡@¡@Profiling interface trap/charge in MOS device by charge pumping analysis¡B
¡@¡@¡@Plasma processing for semiconductor device¡B
¡@¡@¡@Radiation effects and applications on semiconductor devices
   
ºtÁ¿¹Å»«¡G®]¤¸¦¨ ®Õ¸u°Æ®Õªøº[°|ªø/²×¨­Á¿®y±Ð±Â/¯S¸u¡]­Ý¡^Á¿®y±Ð±Â/¸³¨Æ/¿W¸³/¥D¥ô©e­û
(°ê¥ß¶§©ú¥æ³q¤j¾Ç/°ê¥ß¶§©ú¥æ³q¤j¾Ç²£¾Ç³Ð·s¬ã¨s¾Ç°|/°ê¥ß¶§©ú¥æ³q¤j¾Ç/°ê¥ß¥xÆW¤j¾Ç/«ä·½°òª÷·|/
¤O©ô¹q¤lªÑ¥÷¦³­­¤½¥q/¥xÆW¥b¾ÉÅé²£·~¨ó·|¥b¾ÉÅé¼ú¿î¿ï©e­û·|)

¾Ç¾ú¡G¬ü°ê¥ì§Q¿Õ¤j¾Ç­»Âb¤À®Õ¹q¾÷ ³Õ¤h
¸g¾ú¡G¥x¿n¹q§Þ³Nªø¡B¬ãµo°ÆÁ`¡]2006-2018); ³Bªø¡B¸ê²`³Bªø(1997-2006)
¡@¡@¡@¦wùÖ¸ê°T¿W¸³ (Oct. 2018-Dec. 2021)
¡@¡@¡@¬ü°êSematech (2011-2015)º[ SRC¸³¨Æ(2018)
¡@¡@¡@¬ü°êIBM ¬ã¨sÁ`³¡¬ãµo¥DºÞ(1983-1997)
±Mªø¡Gsemiconductor R&D¡BR&D management¡Btechnology roadmap¡Btechnology development¡B
¡@¡@¡@qualification¡Bpilot line operation¡Bmanufacturing transfer¡Bsemiconductor market¡B
¡@¡@¡@VLSI applications¡B and business strategy
   
ºtÁ¿¹Å»«¡GProf. Peide Ye
(Chair Professor, Purdue Univ.)

¾Ç¾ú¡GPh.D., Max-Planck-Institute for Solid State Research, Stuttgart, Germany, 1996
¸g¾ú¡GAT&T Researcher, Professor of Purdue
±Mªø¡GSemiconductor physics and devices¡BNano-structures and nano-fabrications¡B
¡@¡@¡@Quantum/spin-transport¡B2D materials including grapheme¡BTMDs¡BBP and Te
¡@¡@¡@Atomic layer deposition¡BHigh-k and ferroelectric dielectrics¡BHigh-performance III-V MOSFETs
¡@¡@¡@High-performance Ge CMOS¡BHigh-performance oxide semiconductors for 3D integration
   
ºtÁ¿¹Å»«¡G§d¥õ®¦ °ÆÁ`¸g²z
(¤Í¹F¥ú¹qªÑ¥÷¦³­­¤½¥qÅã¥Ü²£«~¬ãµoÁ`³¡)

¾Ç¾ú¡G°ê¥ß¶§©ú¥æ³q¤j¾Ç ¥ú¹q¤uµ{©ÒºÓ¤h
¸g¾ú¡G2023¦~~¨´¤µ ¤Í¹F¥ú¹q Åã¥Ü²£«~¬ãµoÁ`³¡ °ÆÁ`¸g²z
¡@¡@¡@2018¦~~2023¦~ ¤Í¹F¥ú¹q §Þ³N¶}µoÁ`³¡ ¸ê²`¨ó²z
¡@¡@¡@2010¦~~2018¦~ ¤Í¹F¥ú¹q IT²£«~¨Æ·~³æ¦ì ¨ó²z
¡@¡@¡@2007¦~~2010¦~ ¤Í¹F¥ú¹q NB¦æ¾P³B ³Bªø
¡@¡@¡@2004¦~~2007¦~ ¤Í¹F¥ú¹q NB²£«~¶}µo³¡ ¸g²z
¡@¡@¡@2000¦~ ¥[¤J¤Í¹F¥ú¹q ¬ãµo³æ¦ì
±Mªø¡G¦UºØÅã¥Ü§Þ³N¡B·P´ú§Þ³N­ì²z¤ÎÀ³¥Î


* Ápµ¸¸ê°T¡G±i¤p©j 03-5623116¤À¾÷3218¡Ascchang@tcfst.org.tw

¥D¿ì³æ¦ì¡G °ê®a¬ì¾Ç¤Î§Þ³N©e­û·|·s¦Ë¬ì¾Ç¶é°ÏºÞ²z§½
°õ¦æ³æ¦ì¡G °]¹Îªk¤H¦Û±j¤u·~¬ì¾Ç°òª÷·|