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Foresight and Challenges of Oxide Semiconductor Devices in AI Applications
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14:20-15:00 Atomic-layer-deposited atomically thin In2O3 channel for BEOL logic/RF and memory applications Prof. Peide Ye
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15:20-16:00 Research on materials and processes for
high-performance oxide Semiconductor Device
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±Mªø¡GFields of Interest¡BHigh-k gate dielectric for VLSI device¡BNonvolatile memory device (Flash)¡B
¡@¡@¡@Profiling interface trap/charge in MOS device by charge pumping analysis¡B
¡@¡@¡@Plasma processing for semiconductor device¡B
¡@¡@¡@Radiation effects and applications on semiconductor devices
   
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¸g¾ú¡G¥x¿n¹q§Þ³Nªø¡B¬ãµo°ÆÁ`¡]2006-2018); ³Bªø¡B¸ê²`³Bªø(1997-2006)
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¡@¡@¡@¬ü°êSematech (2011-2015)º[ SRC¸³¨Æ(2018)
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±Mªø¡Gsemiconductor R&D¡BR&D management¡Btechnology roadmap¡Btechnology development¡B
¡@¡@¡@qualification¡Bpilot line operation¡Bmanufacturing transfer¡Bsemiconductor market¡B
¡@¡@¡@VLSI applications¡B and business strategy
   
ºtÁ¿¹Å»«¡GProf. Peide Ye
(Chair Professor, Purdue Univ.)

¾Ç¾ú¡GPh.D., Max-Planck-Institute for Solid State Research, Stuttgart, Germany, 1996
¸g¾ú¡GAT&T Researcher, Professor of Purdue
±Mªø¡GSemiconductor physics and devices¡BNano-structures and nano-fabrications¡B
¡@¡@¡@Quantum/spin-transport¡B2D materials including grapheme¡BTMDs¡BBP and Te
¡@¡@¡@Atomic layer deposition¡BHigh-k and ferroelectric dielectrics¡BHigh-performance III-V MOSFETs
¡@¡@¡@High-performance Ge CMOS¡BHigh-performance oxide semiconductors for 3D integration
   
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¸g¾ú¡G¾Ö¦³¶W¹L40½g°ê»Ú±M§Q¡A±Mª`©óMetal Oxide TFT»â°ì
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±Mªø¡G°ª®Ä¯à®ñ¤Æª«¥b¾ÉÅ餸¥ó»sµ{¶}µo¡BX-ray Sensor Array ­IªO§Þ³N¶}µo¡B
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